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| Preliminary data BUZ 103S-4 SIPMOS (R) Power Transistor * Quad-channel * Enhancement mode * Avalanche-rated * dv/dt rated Type BUZ 103S-4 VDS 55 V ID 5.3 A RDS(on) 0.045 Package P-DSO-28 Ordering Code C67078-S. . . . -A.. Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 5.3 Unit A ID IDpuls 21.2 TA = 25 C Pulsed drain current one channel active TA = 25 C Avalanche energy, single pulse EAS 140 dv/dt 6 mJ ID = 5.3 A, VDD = 25 V, RGS = 25 L = 9.97 mH, Tj = 25 C Reverse diode dv/dt kV/s IS = 5.3 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C Gate source voltage Power dissipation ,one channel active VGS Ptot 20 2.4 V W TA = 25 C Operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Tj Tstg -55 ... + 175 -55 ... + 175 55 / 175 / 56 C Semiconductor Group 1 06/Nov/1997 Preliminary data BUZ 103S-4 Thermal Characteristics Parameter Symbol min. Thermal resistance, junction - soldering point 1) Thermal resistance, junction - ambient 2) Values typ. tbd 62.5 max. K/W Unit RthJS RthJA - 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70m thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 55 3 0.1 10 0.035 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 50 A Zero gate voltage drain current IDSS 0.1 1 100 A VDS = 55 V, VGS = 0 V, Tj = -40 C VDS = 55 V, VGS = 0 V, Tj = 25 C VDS = 55 V, VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS 100 nA 0.045 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 5.3 A Semiconductor Group 2 06/Nov/1997 Preliminary data BUZ 103S-4 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 4 720 230 125 - S pF 900 300 160 ns 17 25 VDS 2 * ID * RDS(on)max, ID = 5.3 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 5.3 A RG = 13 Rise time tr 17 25 VDD = 30 V, VGS = 10 V, ID = 5.3 A RG = 13 Turn-off delay time td(off) 40 60 VDD = 30 V, VGS = 10 V, ID = 5.3 A RG = 13 Fall time tf 25 1.3 20 25 5.03 40 nC 2 30 40 V - VDD = 30 V, VGS = 10 V, ID = 5.3 A RG = 13 Gate charge at threshold Qg(th) Qg(7) - VDD = 40 V, ID 0.1 A, VGS =0 to 1 V Gate charge at 7.0 V VDD = 40 V, ID = 5.3 A, VGS =0 to 7 V Gate charge total Qg(total) - VDD = 40 V, ID = 5.3 A, VGS =0 to 10 V Gate plateau voltage V(plateau) VDD = 40 V, ID = 5.3 A Semiconductor Group 3 06/Nov/1997 Preliminary data BUZ 103S-4 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 C Inverse diode direct current, pulsed A 0.95 60 90 5.3 21.2 V 1.6 ns 90 nC 140 Values typ. max. Unit ISM VSD trr Qrr TA = 25 C Inverse diode forward voltage VGS = 0 V, IF = 10.6 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 06/Nov/1997 Preliminary data BUZ 103S-4 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 5.5 A 130 W 110 Ptot 100 90 80 70 60 50 40 ID 4.5 4.0 3.5 3.0 2.5 2.0 1.5 30 20 10 0 0 20 40 60 80 100 120 140 C 180 1.0 0.5 0.0 0 20 40 60 80 100 120 140 C 180 TC TC Semiconductor Group 5 06/Nov/1997 Preliminary data BUZ 103S-4 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 12 A 10 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.14 Pk = 120W tot l jihe g fd VGS [V] a 4.0 b c 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 a b 0.12 ID RDS (on)0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 k e f g hj i c d 9 8 7 6 5 4 3 2 a c d e f g h i bj k l 0.02 VGS [V] = 0.01 0.00 0 a 4.5 4.0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 1 2 3 4 5 6 7 A 9 VDS ID Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 45 A ID 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 V VGS 10 Semiconductor Group 6 06/Nov/1997 Preliminary data BUZ 103S-4 Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 5.3 A, VGS = 10 V 0.15 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 50 A 4.6 V 4.0 0.13 98% RDS (on)0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 -60 VGS(th) 3.6 3.2 2.8 2.4 typ 2% 98% typ 2.0 1.6 1.2 0.8 0.4 -20 20 60 100 C 180 0.0 -60 -20 20 60 100 C 180 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 3 A C pF IF 10 2 10 3 Ciss 10 1 Tj = 25 C typ Tj = 175 C typ Coss Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 15 20 25 30 Crss V 40 VDS 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 06/Nov/1997 Preliminary data BUZ 103S-4 Avalanche energy EAS = (Tj) parameter: ID = 5.3 A, VDD = 25 V RGS = 25 , L = 9.97 mH 150 mJ 130 Typ. gate charge VGS = (QGate) parameter: ID puls = 5 A 16 V EAS 120 110 100 90 80 70 60 50 40 30 20 10 0 20 VGS 12 10 0,2 VDS max 0,8 VDS max 8 6 4 2 0 0 40 60 80 100 120 140 C 180 4 8 12 16 20 24 28 nC 34 Tj QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 06/Nov/1997 |
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